High-temperature magnetism and microstructure of a semiconducting ferromagnetic (GaSb)_1−x(MnSb)_x alloy

• Leonid N. Oveshnikov,
• Elena I. Nekhaeva,
• Alexey V. Kochura,
• Alexander B. Davydov,
• Mikhail A. Shakhov,
• Sergey F. Marenkin,
• Oleg A. Novodvorskii,
• Alexander P. Kuzmenko,
• Alexander L. Vasiliev,
• Boris A. Aronzon and
• Erkki Lahderanta

Beilstein J. Nanotechnol. 2018, 9, 2457–2465, doi:10.3762/bjnano.9.230

• . This is in good agreement with the high mobility values of charge carriers. Based on our data we conclude that the magnetic and magnetotransport properties of the films at room temperature are defined by the MnSb inclusions. Keywords: anomalous Hall effect; high-temperature ferromagnetism

• magnetic clusters and spin-polarized carriers. However, to verify this assumption and to reveal the origin of the high-temperature ferromagnetism in GaSb–MnSb alloys, one needs a detailed knowledge of the sample structure. Thus, in this paper we investigate magnetic and transport properties of the GaSb

• that of the InSb–MnSb eutectic composition, which corresponds to the Tc value of MnSb of ca. 600 K [17]. Thus, presented data clearly proves the presence of high-temperature ferromagnetism in the samples under study. As mentioned above, the studied system differs from traditional DMS materials by